All IGBT. SGL10N60RUFD Datasheet

 

SGL10N60RUFD Datasheet and Replacement


   Type Designator: SGL10N60RUFD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 107 pF
   Qgⓘ - Total Gate Charge, typ: 44 nC
   Package: TO264
      - IGBT Cross-Reference

 

SGL10N60RUFD Datasheet (PDF)

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SGL10N60RUFD

 9.1. Size:832K  cn super semi
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SGL10N60RUFD

SUPER-SEMISUPER-MOSFETSuper Gate Metal Oxide Semiconductor Field Effect Transistor100V Super Gate Power MOSFETSGL100N025Rev. 1.0Jan. 2022www.supersemi.com.cnSGL100N025100V N-Channel MOSFETDescription Features VDS 100VThe SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 200Athat is uniquely optimized to provide the most efficient high Extr

Datasheet: SGH30N60RUFD , SGH40N60UF , SGH40N60UFD , SGH5N120RUF , SGH5N120RUFD , SGH80N60UF , SGH80N60UFD , SGI25N40 , RJP30H1DPD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , SGL50N60RUFD .

History: SG50N06D3S | OST120N65H4SMF | NGD8205N | FGA180N33ATD | FII50-12E | SGT60T65FD1PS

Keywords - SGL10N60RUFD transistor datasheet

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