SGL10N60RUFD Datasheet. Specs and Replacement

Type Designator: SGL10N60RUFD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 75 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 16 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Coesⓘ - Output Capacitance, typ: 107 pF

Package: TO264

  📄📄 Copy 

 SGL10N60RUFD Substitution

- IGBTⓘ Cross-Reference Search

 

SGL10N60RUFD datasheet

 ..1. Size:228K  1
 sgl10n60rufd.pdf pdf_icon

SGL10N60RUFD

... See More ⇒

 9.1. Size:832K  cn super semi
 sgl100n025.pdf pdf_icon

SGL10N60RUFD

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SGL100N025 Rev. 1.0 Jan. 2022 www.supersemi.com.cn SGL100N025 100V N-Channel MOSFET Description Features VDS 100V The SG-MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 200A that is uniquely optimized to provide the most efficient high Extr... See More ⇒

Specs: SGH30N60RUFD, SGH40N60UF, SGH40N60UFD, SGH5N120RUF, SGH5N120RUFD, SGH80N60UF, SGH80N60UFD, SGI25N40, RJP30H2A, SGL15N60RUFD, SGL160N60UFD, SGL20N60RUFD, SGL25N120RUFD, SGL30N60RUFD, SGL40N150, SGL40N150D, SGL50N60RUFD

Keywords - SGL10N60RUFD transistor spec

 SGL10N60RUFD cross reference
 SGL10N60RUFD equivalent finder
 SGL10N60RUFD lookup
 SGL10N60RUFD substitution
 SGL10N60RUFD replacement