SGL50N60RUFD PDF and Equivalents Search

 

SGL50N60RUFD Specs and Replacement

Type Designator: SGL50N60RUFD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 89 nS

Coesⓘ - Output Capacitance, typ: 399 pF

Package: TO264

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SGL50N60RUFD datasheet

 ..1. Size:621K  fairchild semi
 sgl50n60rufd.pdf pdf_icon

SGL50N60RUFD

IGBT SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 50A series is designed f... See More ⇒

Specs: SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , IHW20N120R3 , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF .

History: TSG60N100CE | STGWA100H65DFB2 | STGW60H65DFB | RJP30E3DPP-M0 | STGWT40H65DFB | STGWA30IH65DF | RJH60F6BDPQ-A0

Keywords - SGL50N60RUFD transistor spec

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