All IGBT. SGL50N60RUFD Datasheet

 

SGL50N60RUFD Datasheet and Replacement


   Type Designator: SGL50N60RUFD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 89 nS
   Coesⓘ - Output Capacitance, typ: 399 pF
   Qgⓘ - Total Gate Charge, typ: 145 nC
   Package: TO264
      - IGBT Cross-Reference

 

SGL50N60RUFD Datasheet (PDF)

 ..1. Size:621K  fairchild semi
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SGL50N60RUFD

IGBTSGL50N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100C, VGE = 15VTransistors (IGBTs) provide low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUFD Low saturation voltage : VCE(sat) = 2.2 V @ IC = 50Aseries is designed f

Datasheet: SGL10N60RUFD , SGL15N60RUFD , SGL160N60UFD , SGL20N60RUFD , SGL25N120RUFD , SGL30N60RUFD , SGL40N150 , SGL40N150D , GT30G124 , SGL5N60RUFD , SGL60N90D , SGL60N90DG3 , SGP10N60RUF , SGP13N60UF , SGP13N60UFD , SGP15N60RUF , SGP20N60RUF .

History: SGP6N60UF | RGTH60TS65D

Keywords - SGL50N60RUFD transistor datasheet

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