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SGP6N60UFD Spec and Replacement


   Type Designator: SGP6N60UFD
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 6 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 34 pF
   Package: TO220

 SGP6N60UFD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGP6N60UFD specs

 ..1. Size:272K  samsung
 sgp6n60ufd.pdf pdf_icon

SGP6N60UFD

N-CHANNEL IGBT SGP6N60UFD FEATURES TO-220 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.1 V (@ Ic=3A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 35nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteri... See More ⇒

 5.1. Size:219K  samsung
 sgp6n60uf.pdf pdf_icon

SGP6N60UFD

N-CHANNEL IGBT SGP6N60UF FEATURES TO-220 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.1 V (@ Ic=3A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VG... See More ⇒

Specs: SGP13N60UFD , SGP15N60RUF , SGP20N60RUF , SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , RJH30E2DPP , SGR15N40L , SGR20N40L , SGR2N60UFD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF .

Keywords - SGP6N60UFD transistor spec

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