SGP6N60UFD Datasheet. Specs and Replacement

Type Designator: SGP6N60UFD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 6 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 22 nS

Coesⓘ - Output Capacitance, typ: 34 pF

Package: TO220

  📄📄 Copy 

 SGP6N60UFD Substitution

- IGBTⓘ Cross-Reference Search

 

SGP6N60UFD datasheet

 ..1. Size:272K  samsung
 sgp6n60ufd.pdf pdf_icon

SGP6N60UFD

N-CHANNEL IGBT SGP6N60UFD FEATURES TO-220 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.1 V (@ Ic=3A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 35nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteri... See More ⇒

 5.1. Size:219K  samsung
 sgp6n60uf.pdf pdf_icon

SGP6N60UFD

N-CHANNEL IGBT SGP6N60UF FEATURES TO-220 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.1 V (@ Ic=3A) * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VG... See More ⇒

Specs: SGP13N60UFD, SGP15N60RUF, SGP20N60RUF, SGP23N60UF, SGP40N60UF, SGP5N60RUF, SGP5N60RUFD, SGP6N60UF, IKW50N60T, SGR15N40L, SGR20N40L, SGR2N60UFD, SGR5N60RUF, SGR6N60UF, SGS10N60RUF, SGS10N60RUFD, SGS13N60UF

Keywords - SGP6N60UFD transistor spec

 SGP6N60UFD cross reference
 SGP6N60UFD equivalent finder
 SGP6N60UFD lookup
 SGP6N60UFD substitution
 SGP6N60UFD replacement