SGR2N60UFD PDF and Equivalents Search

 

SGR2N60UFD Specs and Replacement

Type Designator: SGR2N60UFD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 25 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 2.4 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 24 nS

Coesⓘ - Output Capacitance, typ: 18 pF

Package: DPAK

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SGR2N60UFD datasheet

 ..1. Size:323K  samsung
 sgr2n60ufd.pdf pdf_icon

SGR2N60UFD

IGBT CO-PAK SGR2N60UFD FEATURES D-PAK * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.1 V (@ Ic=1.2A) * High Input Impedance *CO-PAK, IGBT with FRD Trr = 45nS (typ.) APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteris... See More ⇒

Specs: SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L , SGR20N40L , CRG60T60AK3HD , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD .

History: MGW12N120D

Keywords - SGR2N60UFD transistor spec

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