All IGBT. SGR2N60UFD Datasheet

 

SGR2N60UFD Datasheet and Replacement


   Type Designator: SGR2N60UFD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 25 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 2.4 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 24 nS
   Coesⓘ - Output Capacitance, typ: 18 pF
   Qgⓘ - Total Gate Charge, typ: 8 nC
   Package: DPAK
      - IGBT Cross-Reference

 

SGR2N60UFD Datasheet (PDF)

 ..1. Size:323K  samsung
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SGR2N60UFD

IGBT CO-PAK SGR2N60UFDFEATURESD-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.1 V (@ Ic=1.2A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 45nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteris

Datasheet: SGP23N60UF , SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L , SGR20N40L , SGT60N60FD1P7 , SGR5N60RUF , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD .

History: IQAB75N60D1

Keywords - SGR2N60UFD transistor datasheet

 SGR2N60UFD cross reference
 SGR2N60UFD equivalent finder
 SGR2N60UFD lookup
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 SGR2N60UFD replacement

 

 
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