All IGBT. SGR5N60RUF Datasheet

 

SGR5N60RUF Datasheet and Replacement


   Type Designator: SGR5N60RUF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 24 nS
   Coesⓘ - Output Capacitance, typ: 67 pF
   Package: DPAK
      - IGBT Cross-Reference

 

SGR5N60RUF Datasheet (PDF)

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SGR5N60RUF

IGBTSGR5N60RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10us @ TC = 100C, VGE = 15V(IGBTs) provide low conduction and switching losses as High speed switchingwell as short circuit ruggedness. The RUF series is Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5Adesigned for ap

Datasheet: SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L , SGR20N40L , SGR2N60UFD , CRG15T120BNR3S , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF .

History: MG300Q2YS50 | DM2G75SH6A | IXGH64N60A3 | IXGT40N60C2D1 | JNG75T65HXU1 | IXGH40N60B2 | 1MB08D-120

Keywords - SGR5N60RUF transistor datasheet

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