SGR5N60RUF Specs and Replacement
Type Designator: SGR5N60RUF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 8 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 24 nS
Coesⓘ - Output Capacitance, typ: 67 pF
Package: DPAK
SGR5N60RUF Substitution - IGBT ⓘ Cross-Reference Search
SGR5N60RUF datasheet
sgr5n60ruf.pdf
IGBT SGR5N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10us @ TC = 100 C, VGE = 15V (IGBTs) provide low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.2 V @ IC = 5A designed for ap... See More ⇒
Specs: SGP40N60UF , SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L , SGR20N40L , SGR2N60UFD , IRGP4086 , SGR6N60UF , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF .
History: AOTF15B65M1
Keywords - SGR5N60RUF transistor spec
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History: AOTF15B65M1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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