SGR6N60UF PDF and Equivalents Search

 

SGR6N60UF Specs and Replacement

Type Designator: SGR6N60UF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 6 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 22 pF

Package: DPAK

 SGR6N60UF Substitution

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SGR6N60UF datasheet

 ..1. Size:544K  fairchild semi
 sgr6n60uf.pdf pdf_icon

SGR6N60UF

IGBT SGR6N60UF Ultra-Fast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage VCE(sat) = 2.1 V @ IC = 3A The UF series is designed for applications such as motor High input impedance control and general inverters where high speed swit... See More ⇒

Specs: SGP5N60RUF, SGP5N60RUFD, SGP6N60UF, SGP6N60UFD, SGR15N40L, SGR20N40L, SGR2N60UFD, SGR5N60RUF, NGD8201N, SGS10N60RUF, SGS10N60RUFD, SGS13N60UF, SGS13N60UFD, SGS23N60UF, SGS23N60UFD, SGS5N60RUF, SGS5N60RUFD

Keywords - SGR6N60UF transistor spec

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