All IGBT. SGR6N60UF Datasheet

 

SGR6N60UF Datasheet and Replacement


   Type Designator: SGR6N60UF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 6 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 22 pF
   Package: DPAK
      - IGBT Cross-Reference

 

SGR6N60UF Datasheet (PDF)

 ..1. Size:544K  fairchild semi
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SGR6N60UF

IGBTSGR6N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed swit

Datasheet: SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L , SGR20N40L , SGR2N60UFD , SGR5N60RUF , YGW40N65F1 , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD .

History: 6MBI150VB-060-50 | 7MBP100VDA060-50 | APT80GA60S | IXXN100N60B3H1 | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH

Keywords - SGR6N60UF transistor datasheet

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