SGR6N60UF Datasheet and Replacement
Type Designator: SGR6N60UF
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 30 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 6 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 22 pF
Package: DPAK
SGR6N60UF substitution
SGR6N60UF Datasheet (PDF)
sgr6n60uf.pdf

IGBTSGR6N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's UF series of Insulated Gate Bipolar Transistors High speed switching(IGBTs) provides low conduction and switching losses. Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3AThe UF series is designed for applications such as motor High input impedancecontrol and general inverters where high speed swit
Datasheet: SGP5N60RUF , SGP5N60RUFD , SGP6N60UF , SGP6N60UFD , SGR15N40L , SGR20N40L , SGR2N60UFD , SGR5N60RUF , NGD8201N , SGS10N60RUF , SGS10N60RUFD , SGS13N60UF , SGS13N60UFD , SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD .
History: SKM300GAR063D
Keywords - SGR6N60UF transistor datasheet
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History: SKM300GAR063D



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