SGU20N40L Datasheet and Replacement
Type Designator: SGU20N40L
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 45 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 1700 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: IPAK
- IGBT Cross-Reference
SGU20N40L Datasheet (PDF)
sgr20n40l sgu20n40l.pdf
August 2001 IGBTSGR20N40L / SGU20N40LGeneral Description FeaturesInsulated Gate Bipolar Transistors (IGBTs) with a trench High input impedancegate structure provide superior conduction and switching High peak current capability (150A)performance in comparison with transistors having a planar Easy gate drivegate structure. They also have wide noise immunity. These
Datasheet: SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGP30N60 , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB .
History: IXXH100N60B3
Keywords - SGU20N40L transistor datasheet
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History: IXXH100N60B3
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