All IGBT. SGU20N40L Datasheet

 

SGU20N40L IGBT. Datasheet pdf. Equivalent


   Type Designator: SGU20N40L
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 45 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 1700 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Package: IPAK

 SGU20N40L Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGU20N40L Datasheet (PDF)

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 sgr20n40l sgu20n40l.pdf

SGU20N40L SGU20N40L

August 2001 IGBTSGR20N40L / SGU20N40LGeneral Description FeaturesInsulated Gate Bipolar Transistors (IGBTs) with a trench High input impedancegate structure provide superior conduction and switching High peak current capability (150A)performance in comparison with transistors having a planar Easy gate drivegate structure. They also have wide noise immunity. These

Datasheet: SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , IRGP4066D , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB .

 

 
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