SGU20N40L PDF and Equivalents Search

 

SGU20N40L Specs and Replacement

Type Designator: SGU20N40L

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 45 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃

tr ⓘ - Rise Time, typ: 1700 nS

Coesⓘ - Output Capacitance, typ: 50 pF

Package: IPAK

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SGU20N40L datasheet

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SGU20N40L

August 2001 IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors (IGBTs) with a trench High input impedance gate structure provide superior conduction and switching High peak current capability (150A) performance in comparison with transistors having a planar Easy gate drive gate structure. They also have wide noise immunity. These ... See More ⇒

Specs: SGS23N60UF , SGS23N60UFD , SGS5N60RUF , SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , RJH60F7BDPQ-A0 , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB .

History: T0900EB45A | TT030K065EQ | SII150N12 | RJH60V2BDPP-M0 | SGP23N60UF | SSM20G45EGH

Keywords - SGU20N40L transistor spec

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