SGW23N60UF IGBT. Datasheet pdf. Equivalent
Type Designator: SGW23N60UF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 23 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 65 pF
Qgⓘ - Total Gate Charge, typ: 48 nC
Package: TO263
SGW23N60UF Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGW23N60UF Datasheet (PDF)
sgw23n60uf.pdf
N-CHANNEL IGBT SGW23N60UFFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter Voltage
sgw23n60ufd.pdf
N-CHANNEL IGBT SGW23N60UFDFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 42nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacte
Datasheet: SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , TGPF30N43P , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB , HIA50N65IH-SA , HIA30N140IH-DA , SKM100GAL123D .
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