All IGBT. SGW23N60UF Datasheet

 

SGW23N60UF Datasheet and Replacement


   Type Designator: SGW23N60UF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 23 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 65 pF
   Package: TO263
      - IGBT Cross-Reference

 

SGW23N60UF Datasheet (PDF)

 ..1. Size:230K  samsung
 sgw23n60uf.pdf pdf_icon

SGW23N60UF

N-CHANNEL IGBT SGW23N60UFFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A)* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES 600 VCollector-Emitter Voltage

 0.1. Size:270K  samsung
 sgw23n60ufd.pdf pdf_icon

SGW23N60UF

N-CHANNEL IGBT SGW23N60UFDFEATURESD2-PAK* High Speed Switching* Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A)* High Input Impedance*CO-PAK, IGBT with FRD : Trr = 42nS (typ.)APPLICATIONSC* AC & DC Motor controls* General Purpose InvertersG* Robotics , Servo Controls* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacte

Datasheet: SGS5N60RUFD , SGS6N60UF , SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , TGPF30N43P , SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB , HIA50N65IH-SA , HIA30N140IH-DA , SKM100GAL123D .

History: JNG25T120HS | IGB30N60T | HGTP10N120BN | F3L75R07W2E3_B11 | CT20ASL-8 | STGB10M65DF2 | MMG75SR120UZA

Keywords - SGW23N60UF transistor datasheet

 SGW23N60UF cross reference
 SGW23N60UF equivalent finder
 SGW23N60UF lookup
 SGW23N60UF substitution
 SGW23N60UF replacement

 

 
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