All IGBT. SGW5N60RUFD Datasheet

 

SGW5N60RUFD IGBT. Datasheet pdf. Equivalent

Type Designator: SGW5N60RUFD

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2V

Maximum Collector Current |Ic|, A: 5A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 140

Package: TO263

SGW5N60RUFD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGW5N60RUFD Datasheet (PDF)

1.1. sgw5n60ruf.pdf Size:281K _samsung

SGW5N60RUFD
SGW5N60RUFD

N-CHANNEL IGBT SGW5N60RUF FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600

1.2. sgw5n60rufd.pdf Size:325K _samsung

SGW5N60RUFD
SGW5N60RUFD

CO-PAK IGBT SGW5N60RUFD FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ.) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS S

 

Datasheet: SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , STGB10NB37LZ , SGW6N60UF , SGW6N60UFD , SKD100GAL123D , SKD40GAL123D , SKD75GAL123D , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D .

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