All IGBT. SGW5N60RUFD Datasheet

 

SGW5N60RUFD Datasheet and Replacement


   Type Designator: SGW5N60RUFD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 8 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: TO263
      - IGBT Cross-Reference

 

SGW5N60RUFD Datasheet (PDF)

 ..1. Size:325K  samsung
 sgw5n60rufd.pdf pdf_icon

SGW5N60RUFD

CO-PAK IGBT SGW5N60RUFDFEATURESD2-PAK* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A* High Input Impedance* CO-PAK, IGBT with FRD : Trr = 37nS (Typ.)CAPPLICATIONS* AC & DC Motor controlsG* General Purpose Inverters* Robotics , Servo Controls* Power Supply E* Lamp BallastABSOLUTE MAXIMUM RATINGS

 4.1. Size:281K  samsung
 sgw5n60ruf.pdf pdf_icon

SGW5N60RUFD

N-CHANNEL IGBT SGW5N60RUFFEATURESD2-PAK* Short Circuit rated 10uS @Tc=100 * High Speed Switching* Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A* High Input ImpedanceAPPLICATIONSC* AC & DC Motor controls* General Purpose Inverters* Robotics , Servo ControlsG* Power Supply* Lamp Ballast EABSOLUTE MAXIMUM RATINGS Symbol Rating UnitsCharacteristicsVCES

Datasheet: SGS6N60UFD , SGU15N40L , SGU1N60XFD , SGU20N40L , SGW13N60UF , SGW13N60UFD , SGW23N60UF , SGW5N60RUF , STGB10NB37LZ , SGW6N60UF , SGW6N60UFD , HIH30N140IH-DB , HIA50N65IH-SA , HIA30N140IH-DA , SKM100GAL123D , SKM100GAR123D , SKM100GAX173D .

History: DIM600DDM17-A

Keywords - SGW5N60RUFD transistor datasheet

 SGW5N60RUFD cross reference
 SGW5N60RUFD equivalent finder
 SGW5N60RUFD lookup
 SGW5N60RUFD substitution
 SGW5N60RUFD replacement

 

 
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