All IGBT. SKM100GAR123D Datasheet

 

SKM100GAR123D IGBT. Datasheet pdf. Equivalent

Type Designator: SKM100GAR123D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 700W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.8V

Maximum Collector Current |Ic|, A: 100A

Maximum Junction Temperature (Tj), °C: 150

SKM100GAR123D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM100GAR123D Datasheet (PDF)

2.1. skm100gal12t4.pdf Size:498K _igbt

SKM100GAR123D
SKM100GAR123D

SKM100GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 160 A Tj = 175 °C Tc =80°C 123 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 121 A Tj = 175 °C SKM100GAL12T

2.2. skm100gal123d.pdf Size:554K _igbt

SKM100GAR123D
SKM100GAR123D



 3.1. skm100gd063dl.pdf Size:778K _igbt

SKM100GAR123D
SKM100GAR123D



3.2. skm100gb12t4.pdf Size:480K _igbt

SKM100GAR123D
SKM100GAR123D

SKM100GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 160 A Tj = 175 °C Tc =80°C 123 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 121 A Tj = 175 °C SKM100GB12T4 Tc =80°C

 3.3. skm100gb063d.pdf Size:796K _igbt

SKM100GAR123D
SKM100GAR123D



3.4. skm100gb12v.pdf Size:253K _igbt

SKM100GAR123D
SKM100GAR123D

SKM100GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 159 A Tj = 175 °C Tc =80°C 121 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 2 tpsc VGE ≤ 20 V Tj =125°C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 121 A Tj = 175 °C SKM100GB12V Tc =80°C 91 A IFnom 1

 3.5. skm100gb173d.pdf Size:556K _igbt

SKM100GAR123D
SKM100GAR123D



3.6. skm100gb176d.pdf Size:788K _igbt

SKM100GAR123D
SKM100GAR123D



3.7. skm100gb123d.pdf Size:554K _igbt

SKM100GAR123D
SKM100GAR123D



3.8. skm100gb12t4g.pdf Size:398K _igbt

SKM100GAR123D
SKM100GAR123D

SKM100GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 154 A Tj = 175 °C Tc =80°C 118 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®3 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 118 A Tj = 175 °C SKM100GB12T4G Tc =80°

Datasheet: SGW5N60RUF , SGW5N60RUFD , SGW6N60UF , SGW6N60UFD , SKD100GAL123D , SKD40GAL123D , SKD75GAL123D , SKM100GAL123D , IRGB20B60PD1 , SKM100GAX173D , SKM100GAY173D , SKM100GB063D , SKM100GB123D , SKM100GB124D , SKM100GB173D , SKM100GD063DL , SKM145GAL063DN .

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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |