SKM145GAY123D Datasheet and Replacement
Type Designator: SKM145GAY123D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 830 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 145 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 1000 pF
Package: MODULE
SKM145GAY123D substitution
SKM145GAY123D Datasheet (PDF)
skm145gax123d skm145gay123d.pdf
SEMITRANS MAbsolute Maximum RatingsValuesIGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 145 GAX 123 D 6)IC Tcase = 25/80 C 145 / 110 ASKM 145 GAY 123 D 6)ICM Tcase = 25/80 C; tp = 1 ms 290 / 220 AVGES 20 VPtot per IGBT, Tcase = 25 C 830 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 40 040 Class F
Datasheet: SKM100GB173D , SKM100GD063DL , SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , IKW40N65WR5 , SKM145GB063DN , SKM145GB123D , SKM145GB124D , SKM145GB124DN , SKM145GB174DN , SKM150GAL123D , SKM150GAR123D , SKM150GB063D .
History: IXGT40N60C2D1
Keywords - SKM145GAY123D transistor datasheet
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SKM145GAY123D lookup
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SKM145GAY123D replacement
History: IXGT40N60C2D1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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