SKM145GAY123D Specs and Replacement
Type Designator: SKM145GAY123D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 830 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 145 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 1000 pF
Package: MODULE SKM145GAY123D Substitution - IGBT ⓘ Cross-Reference Search
SKM145GAY123D datasheet
skm145gax123d skm145gay123d.pdf
SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units VCES 1200 V VCGR RGE = 20 k 1200 V SKM 145 GAX 123 D 6) IC Tcase = 25/80 C 145 / 110 A SKM 145 GAY 123 D 6) ICM Tcase = 25/80 C; tp = 1 ms 290 / 220 A VGES 20 V Ptot per IGBT, Tcase = 25 C 830 W Tj, (Tstg) 40 ... +150 (125) C Visol AC, 1 min. 2500 V humidity DIN 40 040 Class F ... See More ⇒
Specs: SKM100GB173D , SKM100GD063DL , SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , IKW40N65WR5 , SKM145GB063DN , SKM145GB123D , SKM145GB124D , SKM145GB124DN , SKM145GB174DN , SKM150GAL123D , SKM150GAR123D , SKM150GB063D .
Keywords - SKM145GAY123D transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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