SKM145GB063DN Datasheet and Replacement
Type Designator: SKM145GB063DN
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 700 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 1000 pF
Package: MODULE
- IGBT Cross-Reference
SKM145GB063DN Datasheet (PDF)
Datasheet: SKM100GD063DL , SKM145GAL063DN , SKM145GAL123D , SKM145GAL124DN , SKM145GAL174DN , SKM145GAR123D , SKM145GAX123D , SKM145GAY123D , SGT60U65FD1PT , SKM145GB123D , SKM145GB124D , SKM145GB124DN , SKM145GB174DN , SKM150GAL123D , SKM150GAR123D , SKM150GB063D , SKM150GB123D .
History: STGW15H120F2 | HGTP10N120BN | MMG75SR120UZA | F3L75R07W2E3_B11 | STGB10M65DF2 | CT20ASL-8 | IGB30N60T
Keywords - SKM145GB063DN transistor datasheet
SKM145GB063DN cross reference
SKM145GB063DN equivalent finder
SKM145GB063DN lookup
SKM145GB063DN substitution
SKM145GB063DN replacement
History: STGW15H120F2 | HGTP10N120BN | MMG75SR120UZA | F3L75R07W2E3_B11 | STGB10M65DF2 | CT20ASL-8 | IGB30N60T



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