SKM145GB124D IGBT. Datasheet pdf. Equivalent

   Type Designator: SKM145GB124D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 800 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 190 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 1000 pF
   Package: MODULE

SKM145GB124D Transistor Equivalent Substitute - IGBT Cross-Reference Search

SKM145GB124D Datasheet (PDF)

..1. Size:126K semikron
skm145gb124d.pdf

SEMITRANS MAbsolute Maximum RatingsValuesLow Loss IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 145 GB 124 DIC Tcase = 25/70 C 190 / 145 AICM Tcase = 25/70 C; tp = 1 ms 380 / 290 AVGES 20 VPtot per IGBT, Tcase = 25 C 800 WTj, (Tstg) 40 ... + 150 (125) CVisol AC, 1 min. 2 500 Vhumidity DIN 40040 Class Fclimate DIN IEC

0.1. Size:641K semikron
skm145gal124dn skm145gb124dn.pdf