SKM195GAL062D IGBT. Datasheet pdf. Equivalent

   Type Designator: SKM195GAL062D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 700 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 230 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 150 nS
   Coesⓘ - Output Capacitance, typ: 1300 pF
   Package: MODULE

SKM195GAL062D Transistor Equivalent Substitute - IGBT Cross-Reference Search

SKM195GAL062D Datasheet (PDF)

..1. Size:137K semikron
skm195gal062d skm195gb062d.pdf

SEMITRANS MAbsolute Maximum RatingsValuesPT-IGBT ModulesSymbol Conditions 1)UnitsVCES 600 VVCGR RGE = 20 k 600 V SKM 195 GB 062 DIC Tcase = 25/60 C 230 / 195 ASKM 195 GAL 062 D 6)ICM Tcase = 25/60 C; tp = 1 ms 460 / 390 AVGES 20 VPtot per IGBT, Tcase = 25 C 700 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2 500 Vhumidity DIN 40 040 Class Fcl

3.1. Size:668K semikron
skm195gal063dn skm195gar063dn skm195gb063dn.pdf