75333G Datasheet and Replacement
Type Designator: 75333G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 111 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 56 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 1300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO247
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75333G Datasheet (PDF)
huf75333g3 huf75333p3 huf75333s3s huf75333s3.pdf
HUF75333G3, HUF75333P3, HUF75333S3S,HUF75333S3Data Sheet December 200166A, 55V, 0.016 Ohm. N-Channel UltraFET FeaturesPower MOSFETs 66A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impeda
hufa75333p3 hufa75333s3s hufa75333s3st.pdf
HUFA75333G3, HUFA75333P3, HUFA75333S3SData Sheet December 200166A, 55V, 0.016 Ohm. N-Channel UltraFET FeaturesPower MOSFETs 66A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models
Datasheet: 75309D , 75309P3 , 75321D3 , 75321P , 75321S , 75329G , 75329P , 75329S , IRF540N , 75333P , 75333S , 75339G , 75339P , 75339S , 7N50A , A498 , ALD1101APA .
History: 7N65G-TQ2-R | 75307D3
Keywords - 75333G MOSFET datasheet
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History: 7N65G-TQ2-R | 75307D3
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