BUK9907-40ATC Specs and Replacement

Type Designator: BUK9907-40ATC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 272 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm

Package: TO2205

BUK9907-40ATC substitution

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BUK9907-40ATC datasheet

 ..1. Size:355K  philips
 buk9907-40atc.pdf pdf_icon

BUK9907-40ATC

BUK9907-40ATC TrenchPLUS logic level FET Rev. 01 28 January 2002 Product data M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability BUK9907-40A... See More ⇒

 6.1. Size:376K  philips
 buk9107-55ate buk9907-55ate.pdf pdf_icon

BUK9907-40ATC

BUK91/9907-55ATE TrenchPLUS logic level FET Rev. 01 7 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability BUK9107-55ATE in... See More ⇒

Detailed specifications: BUK9660-100A, BUK9675-100A, BUK9675-55A, BUK98150-55A, BUK98180-100A, BUK9832-55A, BUK9875-100A, BUK9880-55A, IRF1405, BUK9907-55ATE, BUK9C07-65BIT, BUK9C10-55BIT, BUK9C10-65BIT, BUK9E04-30B, BUK9E04-40A, BUK9E06-55A, BUK9E06-55B

Keywords - BUK9907-40ATC MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs