All MOSFET. NX2301P Datasheet

 

NX2301P Datasheet and Replacement


   Type Designator: NX2301P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO236AB
 

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NX2301P Datasheet (PDF)

 ..1. Size:911K  nxp
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NX2301P

NX2301P20 V, 2 A P-channel Trench MOSFETRev. 1 26 October 2010 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching

 ..2. Size:223K  tysemi
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NX2301P

Product specificationNX2301P20 V, 2 A P-channel Trench MOSFETRev. 1 26 October 2010 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated for Low Voltage Gate Driv

Datasheet: BUK9Y19-75B , BUK9Y22-30B , BUK9Y27-40B , BUK9Y30-75B , BUK9Y34-100B , BUK9Y40-55B , BUK9Y53-100B , BUK9Y58-75B , IRFB4115 , NX3008CBKS , NX3008CBKV , NX3008NBK , NX3008NBKS , NX3008NBKT , NX3008NBKV , NX3008NBKW , NX3008PBK .

History: AO5800E | SPP03N60C3 | KI1400DL | CJQ4406 | TSM2312CX | 2N7002NXBK | CES2302

Keywords - NX2301P MOSFET datasheet

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