NX2301P Datasheet and Replacement
Type Designator: NX2301P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO236AB
NX2301P substitution
NX2301P Datasheet (PDF)
nx2301p.pdf

NX2301P20 V, 2 A P-channel Trench MOSFETRev. 1 26 October 2010 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching
nx2301p.pdf

Product specificationNX2301P20 V, 2 A P-channel Trench MOSFETRev. 1 26 October 2010 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated for Low Voltage Gate Driv
Datasheet: BUK9Y19-75B , BUK9Y22-30B , BUK9Y27-40B , BUK9Y30-75B , BUK9Y34-100B , BUK9Y40-55B , BUK9Y53-100B , BUK9Y58-75B , IRFB4115 , NX3008CBKS , NX3008CBKV , NX3008NBK , NX3008NBKS , NX3008NBKT , NX3008NBKV , NX3008NBKW , NX3008PBK .
History: 2SK2939 | AM2313P | MIC94050YM4TR | 2SK3230B | DH300P06F | PK8A6EA | TSM2312CX
Keywords - NX2301P MOSFET datasheet
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History: 2SK2939 | AM2313P | MIC94050YM4TR | 2SK3230B | DH300P06F | PK8A6EA | TSM2312CX



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