PH2925U Datasheet and Replacement
Type Designator: PH2925U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: LFPAK
PH2925U substitution
PH2925U Datasheet (PDF)
ph2925u.pdf
PH2925UN-channel TrenchMOS ultra low level FETRev. 04 24 February 2009 Product data sheet1. Product profile1.1 General descriptionUltra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
ph2925u.pdf
PH2925UN-channel TrenchMOS ultra low level FETRev. 04 24 February 2009 Product data sheet1. Product profile1.1 General descriptionUltra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
Datasheet: NX3008NBKV , NX3008NBKW , NX3008PBK , NX3008PBKS , NX3008PBKT , NX3008PBKV , NX3008PBKW , PH2520U , SPP20N60C3 , PH3120L , PHB110NQ08T , PHB18NQ10T , PHB191NQ06LT , PHB20N06T , PHB20NQ20T , PHB27NQ10T , PHB29N08T .
History: FQD2N50TF
Keywords - PH2925U MOSFET datasheet
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History: FQD2N50TF
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