PH2925U Specs and Replacement
Type Designator: PH2925U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: LFPAK
PH2925U substitution
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PH2925U datasheet
ph2925u.pdf
PH2925U N-channel TrenchMOS ultra low level FET Rev. 04 24 February 2009 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe... See More ⇒
ph2925u.pdf
PH2925U N-channel TrenchMOS ultra low level FET Rev. 04 24 February 2009 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe... See More ⇒
Detailed specifications: NX3008NBKV, NX3008NBKW, NX3008PBK, NX3008PBKS, NX3008PBKT, NX3008PBKV, NX3008PBKW, PH2520U, K3569, PH3120L, PHB110NQ08T, PHB18NQ10T, PHB191NQ06LT, PHB20N06T, PHB20NQ20T, PHB27NQ10T, PHB29N08T
Keywords - PH2925U MOSFET specs
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