PHB27NQ10T Specs and Replacement

Type Designator: PHB27NQ10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: D2PAK

PHB27NQ10T substitution

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PHB27NQ10T datasheet

 ..1. Size:118K  philips
 phb27nq10t phd27nq10t php27nq10t 1.pdf pdf_icon

PHB27NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 28 A g RDS(ON) 50 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a ... See More ⇒

 ..2. Size:890K  nxp
 phb27nq10t.pdf pdf_icon

PHB27NQ10T

PHB27NQ10T N-channel TrenchMOS standard level FET Rev. 02 17 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F... See More ⇒

Detailed specifications: PH2520U, PH2925U, PH3120L, PHB110NQ08T, PHB18NQ10T, PHB191NQ06LT, PHB20N06T, PHB20NQ20T, AON7410, PHB29N08T, PHB32N06LT, PHB33NQ20T, PHB45NQ10T, PHB45NQ15T, PHB47NQ10T, PHB66NQ03LT, PHC21025

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.