All MOSFET. PHB27NQ10T Datasheet

 

PHB27NQ10T Datasheet and Replacement


   Type Designator: PHB27NQ10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: D2PAK
 

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PHB27NQ10T Datasheet (PDF)

 ..1. Size:118K  philips
 phb27nq10t phd27nq10t php27nq10t 1.pdf pdf_icon

PHB27NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 28 AgRDS(ON) 50 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a

 ..2. Size:890K  nxp
 phb27nq10t.pdf pdf_icon

PHB27NQ10T

PHB27NQ10TN-channel TrenchMOS standard level FETRev. 02 17 December 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

Datasheet: PH2520U , PH2925U , PH3120L , PHB110NQ08T , PHB18NQ10T , PHB191NQ06LT , PHB20N06T , PHB20NQ20T , RFP50N06 , PHB29N08T , PHB32N06LT , PHB33NQ20T , PHB45NQ10T , PHB45NQ15T , PHB47NQ10T , PHB66NQ03LT , PHC21025 .

History: HAT2173H | IRF6618 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

Keywords - PHB27NQ10T MOSFET datasheet

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