PHB33NQ20T Specs and Replacement

Type Designator: PHB33NQ20T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm

Package: D2PAK

PHB33NQ20T substitution

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PHB33NQ20T datasheet

 ..1. Size:84K  philips
 php33nq20t phb33nq20t.pdf pdf_icon

PHB33NQ20T

PHP/PHB33NQ20T N-channel TrenchMOS standard level FET Rev. 01 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge. 1.3 Applications DC-to-DC ... See More ⇒

 ..2. Size:682K  nxp
 phb33nq20t.pdf pdf_icon

PHB33NQ20T

PHB33NQ20T N-channel TrenchMOS standard level FET Rev. 02 3 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe... See More ⇒

Detailed specifications: PHB110NQ08T, PHB18NQ10T, PHB191NQ06LT, PHB20N06T, PHB20NQ20T, PHB27NQ10T, PHB29N08T, PHB32N06LT, IRF1010E, PHB45NQ10T, PHB45NQ15T, PHB47NQ10T, PHB66NQ03LT, PHC21025, PHC2300, PHD101NQ03LT, PHD20N06T

Keywords - PHB33NQ20T MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.