All MOSFET. PHB66NQ03LT Datasheet

 

PHB66NQ03LT Datasheet and Replacement


   Type Designator: PHB66NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 66 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: D2PAK
 

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PHB66NQ03LT Datasheet (PDF)

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PHB66NQ03LT

PHB66NQ03LTN-channel TrenchMOS logic level FETRev. 07 30 January 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feature

Datasheet: PHB20NQ20T , PHB27NQ10T , PHB29N08T , PHB32N06LT , PHB33NQ20T , PHB45NQ10T , PHB45NQ15T , PHB47NQ10T , IRLB4132 , PHC21025 , PHC2300 , PHD101NQ03LT , PHD20N06T , PHD38N02LT , PHD71NQ03LT , PHD97NQ03LT , PHD9NQ20T .

History: IXZ316N60 | 2SJ259 | GP2M010A065X | SVG032R4NL3 | 30N20 | IXTP12N65X2 | AO4801

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