PHB66NQ03LT Datasheet and Replacement
Type Designator: PHB66NQ03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 93 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 66 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: D2PAK
PHB66NQ03LT substitution
PHB66NQ03LT Datasheet (PDF)
phb66nq03lt.pdf
PHB66NQ03LTN-channel TrenchMOS logic level FETRev. 07 30 January 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feature
Datasheet: PHB20NQ20T , PHB27NQ10T , PHB29N08T , PHB32N06LT , PHB33NQ20T , PHB45NQ10T , PHB45NQ15T , PHB47NQ10T , CS150N03A8 , PHC21025 , PHC2300 , PHD101NQ03LT , PHD20N06T , PHD38N02LT , PHD71NQ03LT , PHD97NQ03LT , PHD9NQ20T .
History: JFHM20N60C
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: JFHM20N60C
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