PHB66NQ03LT Specs and Replacement

Type Designator: PHB66NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 66 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: D2PAK

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PHB66NQ03LT datasheet

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PHB66NQ03LT

PHB66NQ03LT N-channel TrenchMOS logic level FET Rev. 07 30 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feature... See More ⇒

Detailed specifications: PHB20NQ20T, PHB27NQ10T, PHB29N08T, PHB32N06LT, PHB33NQ20T, PHB45NQ10T, PHB45NQ15T, PHB47NQ10T, CS150N03A8, PHC21025, PHC2300, PHD101NQ03LT, PHD20N06T, PHD38N02LT, PHD71NQ03LT, PHD97NQ03LT, PHD9NQ20T

Keywords - PHB66NQ03LT MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.