PHD38N02LT Specs and Replacement

Type Designator: PHD38N02LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 44.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: DPAK

PHD38N02LT substitution

- MOSFET ⓘ Cross-Reference Search

 

PHD38N02LT datasheet

 ..1. Size:84K  nxp
 phd38n02lt.pdf pdf_icon

PHD38N02LT

PHD38N02LT N-channel TrenchMOS logic level FET Rev. 02 2 February 2007 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance 2.5 V gate drive 1.3 Applications Linear regulator for Double-Data Rate (DDR) memory 1.4 Qui... See More ⇒

 ..2. Size:265K  inchange semiconductor
 phd38n02lt.pdf pdf_icon

PHD38N02LT

isc N-Channel MOSFET Transistor PHD38N02LT FEATURES Drain Current I = 44.7A@ T =25 D C Drain Source Voltage- V = 20V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒

Detailed specifications: PHB45NQ10T, PHB45NQ15T, PHB47NQ10T, PHB66NQ03LT, PHC21025, PHC2300, PHD101NQ03LT, PHD20N06T, TK10A60D, PHD71NQ03LT, PHD97NQ03LT, PHD9NQ20T, PHK04P02T, PHK12NQ03LT, PHK12NQ10T, PHK13N03LT, PHK18NQ03LT

Keywords - PHD38N02LT MOSFET specs

 PHD38N02LT cross reference

 PHD38N02LT equivalent finder

 PHD38N02LT pdf lookup

 PHD38N02LT substitution

 PHD38N02LT replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.