All MOSFET. PHD38N02LT Datasheet

 

PHD38N02LT Datasheet and Replacement


   Type Designator: PHD38N02LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 44.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: DPAK
 

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PHD38N02LT Datasheet (PDF)

 ..1. Size:84K  nxp
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PHD38N02LT

PHD38N02LTN-channel TrenchMOS logic level FETRev. 02 2 February 2007 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Low on-state resistance 2.5 V gate drive1.3 Applications Linear regulator for Double-Data Rate (DDR) memory1.4 Qui

 ..2. Size:265K  inchange semiconductor
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PHD38N02LT

isc N-Channel MOSFET Transistor PHD38N02LTFEATURESDrain Current I = 44.7A@ T =25D CDrain Source Voltage-: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Datasheet: PHB45NQ10T , PHB45NQ15T , PHB47NQ10T , PHB66NQ03LT , PHC21025 , PHC2300 , PHD101NQ03LT , PHD20N06T , IRFZ24N , PHD71NQ03LT , PHD97NQ03LT , PHD9NQ20T , PHK04P02T , PHK12NQ03LT , PHK12NQ10T , PHK13N03LT , PHK18NQ03LT .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - PHD38N02LT MOSFET datasheet

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