PHD97NQ03LT Specs and Replacement

Type Designator: PHD97NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: DPAK

PHD97NQ03LT substitution

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PHD97NQ03LT datasheet

 ..1. Size:170K  philips
 phd97nq03lt.pdf pdf_icon

PHD97NQ03LT

PHD97NQ03LT N-channel TrenchMOS logic level FET Rev. 01 24 March 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features ... See More ⇒

 ..2. Size:673K  nxp
 phd97nq03lt.pdf pdf_icon

PHD97NQ03LT

PHD97NQ03LT N-channel TrenchMOS logic level FET Rev. 01 24 March 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features ... See More ⇒

Detailed specifications: PHB47NQ10T, PHB66NQ03LT, PHC21025, PHC2300, PHD101NQ03LT, PHD20N06T, PHD38N02LT, PHD71NQ03LT, BS170, PHD9NQ20T, PHK04P02T, PHK12NQ03LT, PHK12NQ10T, PHK13N03LT, PHK18NQ03LT, PHK28NQ03LT, PHK31NQ03LT

Keywords - PHD97NQ03LT MOSFET specs

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