All MOSFET. PHD97NQ03LT Datasheet

 

PHD97NQ03LT Datasheet and Replacement


   Type Designator: PHD97NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: DPAK
 

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PHD97NQ03LT Datasheet (PDF)

 ..1. Size:170K  philips
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PHD97NQ03LT

PHD97NQ03LTN-channel TrenchMOS logic level FETRev. 01 24 March 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features

 ..2. Size:673K  nxp
 phd97nq03lt.pdf pdf_icon

PHD97NQ03LT

PHD97NQ03LTN-channel TrenchMOS logic level FETRev. 01 24 March 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features

Datasheet: PHB47NQ10T , PHB66NQ03LT , PHC21025 , PHC2300 , PHD101NQ03LT , PHD20N06T , PHD38N02LT , PHD71NQ03LT , 18N50 , PHD9NQ20T , PHK04P02T , PHK12NQ03LT , PHK12NQ10T , PHK13N03LT , PHK18NQ03LT , PHK28NQ03LT , PHK31NQ03LT .

History: 2SK3922-01 | IRLR8256PBF

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