PHD97NQ03LT
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHD97NQ03LT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 107
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063
Ohm
Package:
DPAK
PHD97NQ03LT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHD97NQ03LT
Datasheet (PDF)
..1. Size:170K philips
phd97nq03lt.pdf
PHD97NQ03LTN-channel TrenchMOS logic level FETRev. 01 24 March 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features
..2. Size:673K nxp
phd97nq03lt.pdf
PHD97NQ03LTN-channel TrenchMOS logic level FETRev. 01 24 March 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features
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