PHK12NQ03LT Specs and Replacement

Type Designator: PHK12NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SO8

PHK12NQ03LT substitution

- MOSFET ⓘ Cross-Reference Search

 

PHK12NQ03LT datasheet

 4.1. Size:823K  cn vbsemi
 phk12nq03l.pdf pdf_icon

PHK12NQ03LT

PHK12NQ03L www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch ... See More ⇒

Detailed specifications: PHC2300, PHD101NQ03LT, PHD20N06T, PHD38N02LT, PHD71NQ03LT, PHD97NQ03LT, PHD9NQ20T, PHK04P02T, IRF1407, PHK12NQ10T, PHK13N03LT, PHK18NQ03LT, PHK28NQ03LT, PHK31NQ03LT, PHK5NQ15T, PHKD13N03LT, PHKD3NQ10T

Keywords - PHK12NQ03LT MOSFET specs

 PHK12NQ03LT cross reference

 PHK12NQ03LT equivalent finder

 PHK12NQ03LT pdf lookup

 PHK12NQ03LT substitution

 PHK12NQ03LT replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs