All MOSFET. PHK12NQ03LT Datasheet

 

PHK12NQ03LT MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHK12NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 11.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.6 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SO8

 PHK12NQ03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHK12NQ03LT Datasheet (PDF)

 4.1. Size:823K  cn vbsemi
 phk12nq03l.pdf

PHK12NQ03LT PHK12NQ03LT

PHK12NQ03Lwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXTX120N65X2 | BUK761R5-40E

 

 
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