All MOSFET. PHK18NQ03LT Datasheet

 

PHK18NQ03LT Datasheet and Replacement


   Type Designator: PHK18NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: SO8
 

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PHK18NQ03LT Datasheet (PDF)

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PHK18NQ03LT

PHK18NQ03LTN-channel TrenchMOS logic level FETRev. 03 17 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features

Datasheet: PHD38N02LT , PHD71NQ03LT , PHD97NQ03LT , PHD9NQ20T , PHK04P02T , PHK12NQ03LT , PHK12NQ10T , PHK13N03LT , 13N50 , PHK28NQ03LT , PHK31NQ03LT , PHK5NQ15T , PHKD13N03LT , PHKD3NQ10T , PHKD6N02LT , PHN203 , PHN210T .

History: SVF12N60S | SIHFI720G

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