PHK18NQ03LT Specs and Replacement

Type Designator: PHK18NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm

Package: SO8

PHK18NQ03LT substitution

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PHK18NQ03LT datasheet

 ..1. Size:200K  philips
 phk18nq03lt.pdf pdf_icon

PHK18NQ03LT

PHK18NQ03LT N-channel TrenchMOS logic level FET Rev. 03 17 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features ... See More ⇒

Detailed specifications: PHD38N02LT, PHD71NQ03LT, PHD97NQ03LT, PHD9NQ20T, PHK04P02T, PHK12NQ03LT, PHK12NQ10T, PHK13N03LT, 5N60, PHK28NQ03LT, PHK31NQ03LT, PHK5NQ15T, PHKD13N03LT, PHKD3NQ10T, PHKD6N02LT, PHN203, PHN210T

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.