PHK31NQ03LT Specs and Replacement

Type Designator: PHK31NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm

Package: SO8

PHK31NQ03LT substitution

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PHK31NQ03LT datasheet

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 phk31nq03lt.pdf pdf_icon

PHK31NQ03LT

PHK31NQ03LT N-channel TrenchMOS logic level FET Rev. 3 11 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a... See More ⇒

Detailed specifications: PHD97NQ03LT, PHD9NQ20T, PHK04P02T, PHK12NQ03LT, PHK12NQ10T, PHK13N03LT, PHK18NQ03LT, PHK28NQ03LT, SI2302, PHK5NQ15T, PHKD13N03LT, PHKD3NQ10T, PHKD6N02LT, PHN203, PHN210T, PHP18NQ10T, PHP18NQ11T

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