All MOSFET. PHK31NQ03LT Datasheet

 

PHK31NQ03LT Datasheet and Replacement


   Type Designator: PHK31NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: SO8
 

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PHK31NQ03LT Datasheet (PDF)

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PHK31NQ03LT

PHK31NQ03LTN-channel TrenchMOS logic level FETRev. 3 11 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

Datasheet: PHD97NQ03LT , PHD9NQ20T , PHK04P02T , PHK12NQ03LT , PHK12NQ10T , PHK13N03LT , PHK18NQ03LT , PHK28NQ03LT , IRFZ46N , PHK5NQ15T , PHKD13N03LT , PHKD3NQ10T , PHKD6N02LT , PHN203 , PHN210T , PHP18NQ10T , PHP18NQ11T .

History: AOWF11S60 | STF11NM65N | UTT18P06 | GP2M004A065XG | AP8N3R5CMT | APT4018BN | P1003BDF

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