All MOSFET. PHKD6N02LT Datasheet

 

PHKD6N02LT Datasheet and Replacement


   Type Designator: PHKD6N02LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.9 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SO8
 

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PHKD6N02LT Datasheet (PDF)

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PHKD6N02LT

PHKD6N02LTDual N-channel TrenchMOS logic level FETRev. 04 27 April 2010 Product data sheet1. Product profile1.1 General descriptionDual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2

Datasheet: PHK12NQ10T , PHK13N03LT , PHK18NQ03LT , PHK28NQ03LT , PHK31NQ03LT , PHK5NQ15T , PHKD13N03LT , PHKD3NQ10T , CS150N03A8 , PHN203 , PHN210T , PHP18NQ10T , PHP18NQ11T , PHP191NQ06LT , PHP20N06T , PHP20NQ20T , PHP225 .

History: AOSS21311C | VBE2311

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