PHKD6N02LT Datasheet and Replacement
Type Designator: PHKD6N02LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 10.9 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SO8
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PHKD6N02LT Datasheet (PDF)
phkd6n02lt.pdf
PHKD6N02LTDual N-channel TrenchMOS logic level FETRev. 04 27 April 2010 Product data sheet1. Product profile1.1 General descriptionDual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FS30AS-06 | AP9926GEO | RW1C020UN | IRF441 | STD4N62K3 | SL2300 | GSM3050S
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History: FS30AS-06 | AP9926GEO | RW1C020UN | IRF441 | STD4N62K3 | SL2300 | GSM3050S
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