PHKD6N02LT Specs and Replacement

Type Designator: PHKD6N02LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.9 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SO8

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PHKD6N02LT datasheet

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 phkd6n02lt.pdf pdf_icon

PHKD6N02LT

PHKD6N02LT Dual N-channel TrenchMOS logic level FET Rev. 04 27 April 2010 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 ... See More ⇒

Detailed specifications: PHK12NQ10T, PHK13N03LT, PHK18NQ03LT, PHK28NQ03LT, PHK31NQ03LT, PHK5NQ15T, PHKD13N03LT, PHKD3NQ10T, IRF520, PHN203, PHN210T, PHP18NQ10T, PHP18NQ11T, PHP191NQ06LT, PHP20N06T, PHP20NQ20T, PHP225

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