PHN203
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHN203
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8
V
|Id|ⓘ - Maximum Drain Current: 6.3
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
SO8
PHN203
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHN203
Datasheet (PDF)
..1. Size:79K philips
phn203 2.pdf
Philips Semiconductors Product specification Dual N-channel enhancement mode PHN203 TrenchMOSTM transistorFEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 25 Vd1 d1 d2 d2 Low threshold voltage Fast switching ID = 6.3 A Logic level compatible Surface mount package RDS(ON) 30 m (VGS = 10 V)RDS(ON) 55 m (VGS = 4.5 V)s1g1 s2 g2GENERAL DES
9.1. Size:87K philips
phn205 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPHN205Dual N-channel enhancementmodeMOS transistor1997 Oct 22Product specificationSupersedes data of 1997 Jun 18File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationDual N-channel enhancement modePHN205MOS transistorFEATURES PINNING - SOT96-1 (SO8) High-speed switchingPIN SYMBOL DESCRIPTION
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