PHN203 Datasheet and Replacement
Type Designator: PHN203
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.3 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO8
PHN203 substitution
PHN203 Datasheet (PDF)
phn203 2.pdf

Philips Semiconductors Product specification Dual N-channel enhancement mode PHN203 TrenchMOSTM transistorFEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 25 Vd1 d1 d2 d2 Low threshold voltage Fast switching ID = 6.3 A Logic level compatible Surface mount package RDS(ON) 30 m (VGS = 10 V)RDS(ON) 55 m (VGS = 4.5 V)s1g1 s2 g2GENERAL DES
phn205 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPHN205Dual N-channel enhancementmodeMOS transistor1997 Oct 22Product specificationSupersedes data of 1997 Jun 18File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationDual N-channel enhancement modePHN205MOS transistorFEATURES PINNING - SOT96-1 (SO8) High-speed switchingPIN SYMBOL DESCRIPTION
Datasheet: PHK13N03LT , PHK18NQ03LT , PHK28NQ03LT , PHK31NQ03LT , PHK5NQ15T , PHKD13N03LT , PHKD3NQ10T , PHKD6N02LT , IRFB31N20D , PHN210T , PHP18NQ10T , PHP18NQ11T , PHP191NQ06LT , PHP20N06T , PHP20NQ20T , PHP225 , PHP23NQ11T .
History: NVMFS015N10MCL | SSF13N50 | BRA10N65 | UTT6NP10G-S08-R | SIA537EDJ | SSM6N44FE | QM2N7002E3K1
Keywords - PHN203 MOSFET datasheet
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History: NVMFS015N10MCL | SSF13N50 | BRA10N65 | UTT6NP10G-S08-R | SIA537EDJ | SSM6N44FE | QM2N7002E3K1



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