All MOSFET. PHN210T Datasheet

 

PHN210T MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHN210T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SO8

 PHN210T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHN210T Datasheet (PDF)

 8.1. Size:87K  philips
 phn210 3.pdf

PHN210T PHN210T

Philips Semiconductors Product specification Dual N-channel enhancement mode PHN210 TrenchMOSTM transistorFEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 30 Vd1 d1 d2 d2 Low threshold voltage Fast switching ID = 3.4 A Logic level compatible Surface mount package RDS(ON) 100 m (VGS = 10 V)RDS(ON) 200 m (VGS = 4.5 V)s1g1 s2 g2GENERAL

 8.2. Size:92K  philips
 phn210.pdf

PHN210T PHN210T

Philips Semiconductors Product specification Dual N-channel enhancement mode PHN210 TrenchMOSTM transistorFEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 30 Vd1 d1 d2 d2 Low threshold voltage Fast switching ID = 3.4 A Logic level compatible Surface mount package RDS(ON) 100 m (VGS = 10 V)RDS(ON) 200 m (VGS = 4.5 V)s1g1 s2 g2GENERAL

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IRFPS37N50A | 2N6756JANTX

 

 
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