PHN210T Datasheet and Replacement
Type Designator: PHN210T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SO8
PHN210T substitution
PHN210T Datasheet (PDF)
phn210 3.pdf
Philips Semiconductors Product specification Dual N-channel enhancement mode PHN210 TrenchMOSTM transistorFEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 30 Vd1 d1 d2 d2 Low threshold voltage Fast switching ID = 3.4 A Logic level compatible Surface mount package RDS(ON) 100 m (VGS = 10 V)RDS(ON) 200 m (VGS = 4.5 V)s1g1 s2 g2GENERAL
phn210.pdf
Philips Semiconductors Product specification Dual N-channel enhancement mode PHN210 TrenchMOSTM transistorFEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 30 Vd1 d1 d2 d2 Low threshold voltage Fast switching ID = 3.4 A Logic level compatible Surface mount package RDS(ON) 100 m (VGS = 10 V)RDS(ON) 200 m (VGS = 4.5 V)s1g1 s2 g2GENERAL
Datasheet: PHK18NQ03LT , PHK28NQ03LT , PHK31NQ03LT , PHK5NQ15T , PHKD13N03LT , PHKD3NQ10T , PHKD6N02LT , PHN203 , IRFZ24N , PHP18NQ10T , PHP18NQ11T , PHP191NQ06LT , PHP20N06T , PHP20NQ20T , PHP225 , PHP23NQ11T , PHP27NQ11T .
History: IPW60R099CPA | IXFV30N60P
Keywords - PHN210T MOSFET datasheet
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History: IPW60R099CPA | IXFV30N60P
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