All MOSFET. PHN210T Datasheet

 

PHN210T Datasheet and Replacement


   Type Designator: PHN210T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SO8
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PHN210T Datasheet (PDF)

 8.1. Size:87K  philips
 phn210 3.pdf pdf_icon

PHN210T

Philips Semiconductors Product specification Dual N-channel enhancement mode PHN210 TrenchMOSTM transistorFEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 30 Vd1 d1 d2 d2 Low threshold voltage Fast switching ID = 3.4 A Logic level compatible Surface mount package RDS(ON) 100 m (VGS = 10 V)RDS(ON) 200 m (VGS = 4.5 V)s1g1 s2 g2GENERAL

 8.2. Size:92K  philips
 phn210.pdf pdf_icon

PHN210T

Philips Semiconductors Product specification Dual N-channel enhancement mode PHN210 TrenchMOSTM transistorFEATURES SYMBOL QUICK REFERENCE DATA Dual device VDS = 30 Vd1 d1 d2 d2 Low threshold voltage Fast switching ID = 3.4 A Logic level compatible Surface mount package RDS(ON) 100 m (VGS = 10 V)RDS(ON) 200 m (VGS = 4.5 V)s1g1 s2 g2GENERAL

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AS3442 | IRF441 | AP9926GEO | RW1C020UN | GSM3050S | BS170D74Z | STD4N62K3

Keywords - PHN210T MOSFET datasheet

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