PHP9NQ20T Specs and Replacement
Type Designator: PHP9NQ20T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220AB
PHP9NQ20T substitution
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PHP9NQ20T datasheet
phb9nq20t phd9nq20t php9nq20t 2.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP9NQ20T, PHB9NQ20T PHD9NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 8.7 A g RDS(ON) 400 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using... See More ⇒
php9n60e.pdf
Philips Semiconductors Preliminary specification PowerMOS transistors PHP9N60E, PHB9N60E, PHW9N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 8.7 A g Low thermal resistance RDS(ON) 0.85 s GENERAL DESCRIPTION ... See More ⇒
Detailed specifications: PHP27NQ11T, PHP28NQ15T, PHP29N08T, PHP30NQ15T, PHP33NQ20T, PHP45NQ10T, PHP45NQ11T, PHP79NQ08LT, IRFB7545, PHT4NQ10LT, PHT4NQ10T, PHT6N06T, PHT6NQ10T, PHU97NQ03LT, PMBF170, PMDPB65UP, PMF170XP
Keywords - PHP9NQ20T MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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