PHT4NQ10LT Specs and Replacement

Type Designator: PHT4NQ10LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SC73

PHT4NQ10LT substitution

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PHT4NQ10LT datasheet

 ..1. Size:174K  nxp
 pht4nq10lt.pdf pdf_icon

PHT4NQ10LT

PHT4NQ10LT N-channel TrenchMOS logic level FET Rev. 2 28 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications. 1.2 Features and b... See More ⇒

 6.1. Size:292K  nxp
 pht4nq10t.pdf pdf_icon

PHT4NQ10LT

PHT4NQ10T TrenchMOS standard level FET Rev. 02 2 May 2002 Product data M3D087 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHT4NQ10T in SOT223. 2. Features TrenchMOS technology Very fast switching Surface mount package. 3. Applications Primary side switch in DC to DC conver... See More ⇒

Detailed specifications: PHP28NQ15T, PHP29N08T, PHP30NQ15T, PHP33NQ20T, PHP45NQ10T, PHP45NQ11T, PHP79NQ08LT, PHP9NQ20T, AON7403, PHT4NQ10T, PHT6N06T, PHT6NQ10T, PHU97NQ03LT, PMBF170, PMDPB65UP, PMF170XP, PMF280UN

Keywords - PHT4NQ10LT MOSFET specs

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 PHT4NQ10LT replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs