All MOSFET. PHT4NQ10LT Datasheet

 

PHT4NQ10LT MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHT4NQ10LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SC73

 PHT4NQ10LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHT4NQ10LT Datasheet (PDF)

 ..1. Size:174K  nxp
 pht4nq10lt.pdf

PHT4NQ10LT PHT4NQ10LT

PHT4NQ10LTN-channel TrenchMOS logic level FETRev. 2 28 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.1.2 Features and b

 6.1. Size:292K  nxp
 pht4nq10t.pdf

PHT4NQ10LT PHT4NQ10LT

PHT4NQ10TTrenchMOS standard level FETRev. 02 2 May 2002 Product dataM3D0871. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHT4NQ10T in SOT223.2. Features TrenchMOS technology Very fast switching Surface mount package.3. Applications Primary side switch in DC to DC conver

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