All MOSFET. PHT4NQ10LT Datasheet

 

PHT4NQ10LT Datasheet and Replacement


   Type Designator: PHT4NQ10LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SC73
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PHT4NQ10LT Datasheet (PDF)

 ..1. Size:174K  nxp
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PHT4NQ10LT

PHT4NQ10LTN-channel TrenchMOS logic level FETRev. 2 28 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.1.2 Features and b

 6.1. Size:292K  nxp
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PHT4NQ10LT

PHT4NQ10TTrenchMOS standard level FETRev. 02 2 May 2002 Product dataM3D0871. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHT4NQ10T in SOT223.2. Features TrenchMOS technology Very fast switching Surface mount package.3. Applications Primary side switch in DC to DC conver

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FQB7P20TMF085 | 2N6660C4A | BSC011N03LSI | MMN60NF06 | 2SK2157 | S85N16RN | 15N60

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