All MOSFET. PHU97NQ03LT Datasheet

 

PHU97NQ03LT MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHU97NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: IPAK

 PHU97NQ03LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHU97NQ03LT Datasheet (PDF)

 ..1. Size:200K  philips
 phu97nq03lt.pdf

PHU97NQ03LT PHU97NQ03LT

PHU97NQ03LTN-channel TrenchMOS logic level FETRev. 02 21 December 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HRLP33N03K

 

 
Back to Top