PHU97NQ03LT Specs and Replacement

Type Designator: PHU97NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm

Package: IPAK

PHU97NQ03LT substitution

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PHU97NQ03LT datasheet

 ..1. Size:200K  philips
 phu97nq03lt.pdf pdf_icon

PHU97NQ03LT

PHU97NQ03LT N-channel TrenchMOS logic level FET Rev. 02 21 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Featur... See More ⇒

Detailed specifications: PHP45NQ10T, PHP45NQ11T, PHP79NQ08LT, PHP9NQ20T, PHT4NQ10LT, PHT4NQ10T, PHT6N06T, PHT6NQ10T, MMIS60R580P, PMBF170, PMDPB65UP, PMF170XP, PMF280UN, PMF290XN, PMF370XN, PMF3800SN, PMF400UN

Keywords - PHU97NQ03LT MOSFET specs

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