All MOSFET. PHU97NQ03LT Datasheet

 

PHU97NQ03LT Datasheet and Replacement


   Type Designator: PHU97NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: IPAK
 

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PHU97NQ03LT Datasheet (PDF)

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PHU97NQ03LT

PHU97NQ03LTN-channel TrenchMOS logic level FETRev. 02 21 December 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featur

Datasheet: PHP45NQ10T , PHP45NQ11T , PHP79NQ08LT , PHP9NQ20T , PHT4NQ10LT , PHT4NQ10T , PHT6N06T , PHT6NQ10T , 2N7002 , PMBF170 , PMDPB65UP , PMF170XP , PMF280UN , PMF290XN , PMF370XN , PMF3800SN , PMF400UN .

History: STF8N80K5

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