PMF170XP Specs and Replacement

Type Designator: PMF170XP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SC70

PMF170XP substitution

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PMF170XP datasheet

 ..1. Size:700K  nxp
 pmf170xp.pdf pdf_icon

PMF170XP

PMF170XP 20 V, 1 A P-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low RDSon Very fast switching Trench MOSFET technology 3. Applications Relay driver ... See More ⇒

Detailed specifications: PHP9NQ20T, PHT4NQ10LT, PHT4NQ10T, PHT6N06T, PHT6NQ10T, PHU97NQ03LT, PMBF170, PMDPB65UP, 60N06, PMF280UN, PMF290XN, PMF370XN, PMF3800SN, PMF400UN, PMF780SN, PMFPB6532UP, PMFPB6545UP

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