PMF170XP Datasheet and Replacement
Type Designator: PMF170XP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SC70
PMF170XP substitution
PMF170XP Datasheet (PDF)
pmf170xp.pdf

PMF170XP20 V, 1 A P-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) smallSurface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low RDSon Very fast switching Trench MOSFET technology3. Applications Relay driver
Datasheet: PHP9NQ20T , PHT4NQ10LT , PHT4NQ10T , PHT6N06T , PHT6NQ10T , PHU97NQ03LT , PMBF170 , PMDPB65UP , AO4468 , PMF280UN , PMF290XN , PMF370XN , PMF3800SN , PMF400UN , PMF780SN , PMFPB6532UP , PMFPB6545UP .
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History: SI4622DY | VBZL80N03



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