PMF370XN Specs and Replacement

Type Designator: PMF370XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.87 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: SC70

PMF370XN substitution

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PMF370XN datasheet

 ..1. Size:262K  nxp
 pmf370xn.pdf pdf_icon

PMF370XN

PMF370XN N-channel TrenchMOS extremely low level FET 5 July 2019 Product data sheet 1. General description Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits Low con... See More ⇒

Detailed specifications: PHT6N06T, PHT6NQ10T, PHU97NQ03LT, PMBF170, PMDPB65UP, PMF170XP, PMF280UN, PMF290XN, IRF730, PMF3800SN, PMF400UN, PMF780SN, PMFPB6532UP, PMFPB6545UP, PMG370XN, PMG85XP, PMGD280UN

Keywords - PMF370XN MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.