All MOSFET. PMF370XN Datasheet

 

PMF370XN Datasheet and Replacement


   Type Designator: PMF370XN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.87 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: SC70
 

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PMF370XN Datasheet (PDF)

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PMF370XN

PMF370XNN-channel TrenchMOS extremely low level FET5 July 2019 Product data sheet1. General descriptionExtremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product is designed and qualified for use incomputing, communications, consumer and industrial applications only.2. Features and benefits Low con

Datasheet: PHT6N06T , PHT6NQ10T , PHU97NQ03LT , PMBF170 , PMDPB65UP , PMF170XP , PMF280UN , PMF290XN , BS170 , PMF3800SN , PMF400UN , PMF780SN , PMFPB6532UP , PMFPB6545UP , PMG370XN , PMG85XP , PMGD280UN .

History: ME80N75FG | LD1014D | 2SK1581 | DMG4932LSD | CRTD110N03L | 2SK2058 | AP4503GM

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