PMF400UN Specs and Replacement

Type Designator: PMF400UN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.83 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: SC70

PMF400UN substitution

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PMF400UN datasheet

 ..1. Size:91K  philips
 pmf400un.pdf pdf_icon

PMF400UN

PMF400UN N-channel TrenchMOS ultra low level FET Rev. 01 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Low on-state resistance Low threshold voltage. 1.3 Applications Driver ... See More ⇒

 ..2. Size:1783K  cn vbsemi
 pmf400un.pdf pdf_icon

PMF400UN

PMF400UN www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.036 at VGS = 10 V 4 TrenchFET Power MOSFET 20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM 0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC ... See More ⇒

Detailed specifications: PHU97NQ03LT, PMBF170, PMDPB65UP, PMF170XP, PMF280UN, PMF290XN, PMF370XN, PMF3800SN, IRF3205, PMF780SN, PMFPB6532UP, PMFPB6545UP, PMG370XN, PMG85XP, PMGD280UN, PMGD290XN, PMGD370XN

Keywords - PMF400UN MOSFET specs

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