All MOSFET. PMF400UN Datasheet

 

PMF400UN Datasheet and Replacement


   Type Designator: PMF400UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.83 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: SC70
 

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PMF400UN Datasheet (PDF)

 ..1. Size:91K  philips
 pmf400un.pdf pdf_icon

PMF400UN

PMF400UNN-channel TrenchMOS ultra low level FETRev. 01 11 February 2004 Product dataM3D1021. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Low on-state resistance Low threshold voltage.1.3 Applications Driver

 ..2. Size:1783K  cn vbsemi
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PMF400UN

PMF400UNwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC

Datasheet: PHU97NQ03LT , PMBF170 , PMDPB65UP , PMF170XP , PMF280UN , PMF290XN , PMF370XN , PMF3800SN , IRF3205 , PMF780SN , PMFPB6532UP , PMFPB6545UP , PMG370XN , PMG85XP , PMGD280UN , PMGD290XN , PMGD370XN .

History: TSM75N75CZ | AP4543GEH-HF | PDN2309S | NCE60N1K0I

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