PMG85XP Specs and Replacement

Type Designator: PMG85XP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: TSSOP6

PMG85XP substitution

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PMG85XP datasheet

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 pmg85xp.pdf pdf_icon

PMG85XP

PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev. 1 28 June 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fa... See More ⇒

Detailed specifications: PMF290XN, PMF370XN, PMF3800SN, PMF400UN, PMF780SN, PMFPB6532UP, PMFPB6545UP, PMG370XN, IRF540, PMGD280UN, PMGD290XN, PMGD370XN, PMGD400UN, PMGD780SN, PMGD8000LN, PMK30EP, PMK35EP

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