PMG85XP Datasheet and Replacement
Type Designator: PMG85XP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: TSSOP6
PMG85XP substitution
PMG85XP Datasheet (PDF)
pmg85xp.pdf

PMG85XP20 V, 2 A P-channel Trench MOSFETRev. 1 28 June 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fa
Datasheet: PMF290XN , PMF370XN , PMF3800SN , PMF400UN , PMF780SN , PMFPB6532UP , PMFPB6545UP , PMG370XN , IRF540 , PMGD280UN , PMGD290XN , PMGD370XN , PMGD400UN , PMGD780SN , PMGD8000LN , PMK30EP , PMK35EP .
History: DH045N06D
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History: DH045N06D



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