PMGD370XN Specs and Replacement

Type Designator: PMGD370XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.74 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: TSSOP6

PMGD370XN substitution

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PMGD370XN datasheet

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 pmgd370xn.pdf pdf_icon

PMGD370XN

PMGD370XN Dual N-channel TrenchMOS extremely low level FET Rev. 01 27 February 2004 Product data MBD128 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low th... See More ⇒

Detailed specifications: PMF400UN, PMF780SN, PMFPB6532UP, PMFPB6545UP, PMG370XN, PMG85XP, PMGD280UN, PMGD290XN, IRFZ44, PMGD400UN, PMGD780SN, PMGD8000LN, PMK30EP, PMK35EP, PMK50XP, PML260SN, PML340SN

Keywords - PMGD370XN MOSFET specs

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