All MOSFET. PMGD400UN Datasheet

 

PMGD400UN Datasheet and Replacement


   Type Designator: PMGD400UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.71 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TSSOP6
 

 PMGD400UN substitution

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PMGD400UN Datasheet (PDF)

 ..1. Size:95K  philips
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PMGD400UN

PMGD400UNDual N-channel TrenchMOS ultra low level FETRev. 01 3 March 2004 Product dataMBD1281. Product profile1.1 DescriptionDual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low threshold

Datasheet: PMF780SN , PMFPB6532UP , PMFPB6545UP , PMG370XN , PMG85XP , PMGD280UN , PMGD290XN , PMGD370XN , IRFP460 , PMGD780SN , PMGD8000LN , PMK30EP , PMK35EP , PMK50XP , PML260SN , PML340SN , PMN20EN .

History: STP36NF06 | 2SK777 | BSC030N08NS5 | NCE65N230D | AM4917P | PM516BZ | IAUC24N10S5L300

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