PMGD400UN Datasheet and Replacement
Type Designator: PMGD400UN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.71 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TSSOP6
PMGD400UN substitution
PMGD400UN Datasheet (PDF)
pmgd400un.pdf

PMGD400UNDual N-channel TrenchMOS ultra low level FETRev. 01 3 March 2004 Product dataMBD1281. Product profile1.1 DescriptionDual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low threshold
Datasheet: PMF780SN , PMFPB6532UP , PMFPB6545UP , PMG370XN , PMG85XP , PMGD280UN , PMGD290XN , PMGD370XN , IRFZ44 , PMGD780SN , PMGD8000LN , PMK30EP , PMK35EP , PMK50XP , PML260SN , PML340SN , PMN20EN .
History: NCE50NF330F | HGK020NE4S
Keywords - PMGD400UN MOSFET datasheet
PMGD400UN cross reference
PMGD400UN equivalent finder
PMGD400UN lookup
PMGD400UN substitution
PMGD400UN replacement
History: NCE50NF330F | HGK020NE4S



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