All MOSFET. PMGD400UN Datasheet

 

PMGD400UN Datasheet and Replacement


   Type Designator: PMGD400UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 0.71 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TSSOP6
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PMGD400UN Datasheet (PDF)

 ..1. Size:95K  philips
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PMGD400UN

PMGD400UNDual N-channel TrenchMOS ultra low level FETRev. 01 3 March 2004 Product dataMBD1281. Product profile1.1 DescriptionDual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low threshold

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SM6A12NSFP | FCPF7N60YDTU

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