PMGD400UN MOSFET. Datasheet pdf. Equivalent
Type Designator: PMGD400UN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 0.71 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TSSOP6
PMGD400UN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMGD400UN Datasheet (PDF)
pmgd400un.pdf
PMGD400UNDual N-channel TrenchMOS ultra low level FETRev. 01 3 March 2004 Product dataMBD1281. Product profile1.1 DescriptionDual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low threshold
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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