PMGD400UN Specs and Replacement

Type Designator: PMGD400UN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.71 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TSSOP6

PMGD400UN substitution

- MOSFET ⓘ Cross-Reference Search

 

PMGD400UN datasheet

 ..1. Size:95K  philips
 pmgd400un.pdf pdf_icon

PMGD400UN

PMGD400UN Dual N-channel TrenchMOS ultra low level FET Rev. 01 3 March 2004 Product data MBD128 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Surface mounted package Footprint 40% smaller than SOT23 Dual device Fast switching Low on-state resistance Low threshold ... See More ⇒

Detailed specifications: PMF780SN, PMFPB6532UP, PMFPB6545UP, PMG370XN, PMG85XP, PMGD280UN, PMGD290XN, PMGD370XN, IRF640, PMGD780SN, PMGD8000LN, PMK30EP, PMK35EP, PMK50XP, PML260SN, PML340SN, PMN20EN

Keywords - PMGD400UN MOSFET specs

 PMGD400UN cross reference

 PMGD400UN equivalent finder

 PMGD400UN pdf lookup

 PMGD400UN substitution

 PMGD400UN replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility