All MOSFET. PMGD8000LN Datasheet

 

PMGD8000LN Datasheet and Replacement


   Type Designator: PMGD8000LN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.125 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT363 SC88
 

 PMGD8000LN substitution

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PMGD8000LN Datasheet (PDF)

 ..1. Size:233K  philips
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PMGD8000LN

PMGD8000LNDual TrenchMOS logic level FETRev. 01 27 February 2003 Product dataMBD1281. DescriptionDual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMGD8000LN in SOT363 (SC-88).2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pac

Datasheet: PMFPB6545UP , PMG370XN , PMG85XP , PMGD280UN , PMGD290XN , PMGD370XN , PMGD400UN , PMGD780SN , IRFP260N , PMK30EP , PMK35EP , PMK50XP , PML260SN , PML340SN , PMN20EN , PMN23UN , PMN25EN .

History: SWK083R06VLS | MML60R290PTH | DMN3110LCP3 | TPC8104 | HMS11N70F | AP6C036M | AP4532GM

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