PMGD8000LN Specs and Replacement

Type Designator: PMGD8000LN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.125 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: SOT363 SC88

PMGD8000LN substitution

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PMGD8000LN datasheet

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PMGD8000LN

PMGD8000LN Dual TrenchMOS logic level FET Rev. 01 27 February 2003 Product data MBD128 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMGD8000LN in SOT363 (SC-88). 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount pac... See More ⇒

Detailed specifications: PMFPB6545UP, PMG370XN, PMG85XP, PMGD280UN, PMGD290XN, PMGD370XN, PMGD400UN, PMGD780SN, IRLZ44N, PMK30EP, PMK35EP, PMK50XP, PML260SN, PML340SN, PMN20EN, PMN23UN, PMN25EN

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.