PMK30EP MOSFET. Datasheet pdf. Equivalent
Type Designator: PMK30EP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 6.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 14.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SO8
PMK30EP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMK30EP Datasheet (PDF)
pmk30ep.pdf
PMK30EPP-channel TrenchMOS extremely low level FETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
pmk30ep.pdf
PMK30EPP-channel TrenchMOS extremely low level FETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
