PMK30EP Datasheet and Replacement
Type Designator: PMK30EP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 6.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SO8
PMK30EP substitution
PMK30EP Datasheet (PDF)
pmk30ep.pdf
PMK30EPP-channel TrenchMOS extremely low level FETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
pmk30ep.pdf
PMK30EPP-channel TrenchMOS extremely low level FETRev. 04 25 October 2010 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Datasheet: PMG370XN , PMG85XP , PMGD280UN , PMGD290XN , PMGD370XN , PMGD400UN , PMGD780SN , PMGD8000LN , IRF640N , PMK35EP , PMK50XP , PML260SN , PML340SN , PMN20EN , PMN23UN , PMN25EN , PMN25UN .
History: NVMTS0D6N04C
Keywords - PMK30EP MOSFET datasheet
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History: NVMTS0D6N04C
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