PMK30EP Specs and Replacement

Type Designator: PMK30EP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: SO8

PMK30EP substitution

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PMK30EP datasheet

 ..1. Size:163K  philips
 pmk30ep.pdf pdf_icon

PMK30EP

PMK30EP P-channel TrenchMOS extremely low level FET Rev. 04 25 October 2010 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ... See More ⇒

 ..2. Size:761K  nxp
 pmk30ep.pdf pdf_icon

PMK30EP

PMK30EP P-channel TrenchMOS extremely low level FET Rev. 04 25 October 2010 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ... See More ⇒

Detailed specifications: PMG370XN, PMG85XP, PMGD280UN, PMGD290XN, PMGD370XN, PMGD400UN, PMGD780SN, PMGD8000LN, IRFB4110, PMK35EP, PMK50XP, PML260SN, PML340SN, PMN20EN, PMN23UN, PMN25EN, PMN25UN

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