All MOSFET. PMK50XP Datasheet

 

PMK50XP Datasheet and Replacement


   Type Designator: PMK50XP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SO8
 

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PMK50XP Datasheet (PDF)

 ..1. Size:180K  philips
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PMK50XP

PMK50XPP-channel TrenchMOS extremely low level FETRev. 02 28 April 2010 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1

 ..2. Size:850K  cn vbsemi
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PMK50XP

PMK50XPwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical E

Datasheet: PMGD280UN , PMGD290XN , PMGD370XN , PMGD400UN , PMGD780SN , PMGD8000LN , PMK30EP , PMK35EP , 10N60 , PML260SN , PML340SN , PMN20EN , PMN23UN , PMN25EN , PMN25UN , PMN27UN , PMN27UP .

History: SWB042R10ES | CHT2301WGP | TPB65R600M | MP7AN65EC | TPP90R350A | DKI03038 | 20N70KL-TF2-T

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