All MOSFET. PMN20EN Datasheet

 

PMN20EN Datasheet and Replacement


   Type Designator: PMN20EN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.545 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSOP6
 

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PMN20EN Datasheet (PDF)

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PMN20EN

PMN20ENA40 V, N-channel Trench MOSFET30 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology AE

Datasheet: PMGD400UN , PMGD780SN , PMGD8000LN , PMK30EP , PMK35EP , PMK50XP , PML260SN , PML340SN , P55NF06 , PMN23UN , PMN25EN , PMN25UN , PMN27UN , PMN27UP , PMN28UN , PMN34LN , PMN34UN .

History: LNSC3400 | STF8NM60N | 25N10L-TF3-T | MME70R380PRH | IRFP440R | QS8M51 | CS12N65FA9R

Keywords - PMN20EN MOSFET datasheet

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