PMN20EN Specs and Replacement
Type Designator: PMN20EN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.545 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TSOP6
PMN20EN substitution
- MOSFET ⓘ Cross-Reference Search
PMN20EN datasheet
pmn20ena.pdf
PMN20ENA 40 V, N-channel Trench MOSFET 30 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology AE... See More ⇒
Detailed specifications: PMGD400UN, PMGD780SN, PMGD8000LN, PMK30EP, PMK35EP, PMK50XP, PML260SN, PML340SN, IRF3710, PMN23UN, PMN25EN, PMN25UN, PMN27UN, PMN27UP, PMN28UN, PMN34LN, PMN34UN
Keywords - PMN20EN MOSFET specs
PMN20EN cross reference
PMN20EN equivalent finder
PMN20EN pdf lookup
PMN20EN substitution
PMN20EN replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
