PMN48XP
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN48XP
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.53
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25
V
|Id|ⓘ - Maximum Drain Current: 4.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
TSOP6
PMN48XP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN48XP
Datasheet (PDF)
..1. Size:1109K nxp
pmn48xp.pdf
PMN48XP20 V, 4.1 A P-channel Trench MOSFETRev. 1 21 April 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low RDSon Trench MOSFET technology Very fast switching1.
0.1. Size:261K nxp
pmn48xpa.pdf
PMN48XPA20 V, P-channel Trench MOSFET17 May 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified3. A
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