All MOSFET. PMV117EN Datasheet

 

PMV117EN MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV117EN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
   Package: TO236AB

 PMV117EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV117EN Datasheet (PDF)

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 pmv117en.pdf

PMV117EN PMV117EN

Product specificationPMV117ENTrenchMOS enhanced logic level FETRev. 02 7 April 2005 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Very fast switching Subminiature surface-mountedpackage1.3 Applicat

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AOD2916 | BSO211P | SSM6N29TU | HAT2279N | FQD2N30TM | PJV1702 | HY1506C2

 

 
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