PMV117EN Specs and Replacement
Type Designator: PMV117EN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
Package: TO236AB
PMV117EN substitution
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PMV117EN datasheet
pmv117en.pdf
Product specification PMV117EN TrenchMOS enhanced logic level FET Rev. 02 7 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very fast switching Subminiature surface-mounted package 1.3 Applicat... See More ⇒
Detailed specifications: PMN55LN, PMR280UN, PMR290XN, PMR370XN, PMR400UN, PMR780SN, PMT21EN, PMT29EN, K4145, PMV160UP, PMV16UN, PMV20XN, PMV213SN, PMV22EN, PMV28UN, PMV30UN, PMV30XN
Keywords - PMV117EN MOSFET specs
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