All MOSFET. PMV117EN Datasheet

 

PMV117EN Datasheet and Replacement


   Type Designator: PMV117EN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
   Package: TO236AB
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PMV117EN Datasheet (PDF)

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PMV117EN

Product specificationPMV117ENTrenchMOS enhanced logic level FETRev. 02 7 April 2005 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Very fast switching Subminiature surface-mountedpackage1.3 Applicat

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History: H7N1004FM | IRFS822 | SML6033BN | STD7NK40Z | BLL6H0514-25 | PSMN3R5-80PS | CJAC100SN08U

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