PMV213SN Datasheet and Replacement
Type Designator: PMV213SN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO236AB
PMV213SN substitution
PMV213SN Datasheet (PDF)
pmv213sn.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pmv213sn.pdf

PMV213SNwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlightin
Datasheet: PMR400UN , PMR780SN , PMT21EN , PMT29EN , PMV117EN , PMV160UP , PMV16UN , PMV20XN , 4435 , PMV22EN , PMV28UN , PMV30UN , PMV30XN , PMV31XN , PMV32UP , PMV37EN , PMV40UN .
History: PE532DY | OSG60R1K8PF
Keywords - PMV213SN MOSFET datasheet
PMV213SN cross reference
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PMV213SN substitution
PMV213SN replacement
History: PE532DY | OSG60R1K8PF



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