All MOSFET. PMV213SN Datasheet

 

PMV213SN MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV213SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 2 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 1.9 A
   Maximum Junction Temperature (Tj): 150 °C
   Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
   Package: TO236AB

 PMV213SN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV213SN Datasheet (PDF)

 ..1. Size:345K  nxp
 pmv213sn.pdf

PMV213SN PMV213SN

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..2. Size:1788K  cn vbsemi
 pmv213sn.pdf

PMV213SN PMV213SN

PMV213SNwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlightin

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF1404 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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