All MOSFET. PMV22EN Datasheet

 

PMV22EN Datasheet and Replacement


   Type Designator: PMV22EN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO236AB
 

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PMV22EN Datasheet (PDF)

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PMV22EN

Product specificationPMV22EN30 V, 5.2 A N-channel Trench MOSFETRev. 1 30 March 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Trench MOSFET

Datasheet: PMR780SN , PMT21EN , PMT29EN , PMV117EN , PMV160UP , PMV16UN , PMV20XN , PMV213SN , IRF530 , PMV28UN , PMV30UN , PMV30XN , PMV31XN , PMV32UP , PMV37EN , PMV40UN , PMV45EN .

History: TSA24N50M | BUK7526-100B | DADMH056N090Z1B | IXFH14N100Q2 | QM0006G | 20N65 | TPM1012R3

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