All MOSFET. PMV31XN Datasheet

 

PMV31XN Datasheet and Replacement


   Type Designator: PMV31XN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO236AB
 

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PMV31XN Datasheet (PDF)

 ..1. Size:241K  philips
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PMV31XN

PMV31XNTrenchMOS extremely low level FETRev. 01 26 February 2003 Product data1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV31XN in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Surface mount package.3. Applications Battery powere

 ..2. Size:210K  tysemi
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PMV31XN

Product specificationPMV31XNN-channel TrenchMOS FETRev. 2 30 November 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology

Datasheet: PMV160UP , PMV16UN , PMV20XN , PMV213SN , PMV22EN , PMV28UN , PMV30UN , PMV30XN , 5N65 , PMV32UP , PMV37EN , PMV40UN , PMV45EN , PMV48XP , PMV56XN , PMV60EN , PMV65XP .

History: 7NM70G-TF3T-T | NCEP10N85AG | P2610BTF | FQD1N80TM | UPA2754GR | MTP4835L3

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