PMV31XN Specs and Replacement

Type Designator: PMV31XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: TO236AB

PMV31XN substitution

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PMV31XN datasheet

 ..1. Size:241K  philips
 pmv31xn.pdf pdf_icon

PMV31XN

PMV31XN TrenchMOS extremely low level FET Rev. 01 26 February 2003 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV31XN in SOT23. 2. Features TrenchMOS technology Very fast switching Low threshold voltage Surface mount package. 3. Applications Battery powere... See More ⇒

 ..2. Size:210K  tysemi
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PMV31XN

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Detailed specifications: PMV160UP, PMV16UN, PMV20XN, PMV213SN, PMV22EN, PMV28UN, PMV30UN, PMV30XN, CS150N03A8, PMV32UP, PMV37EN, PMV40UN, PMV45EN, PMV48XP, PMV56XN, PMV60EN, PMV65XP

Keywords - PMV31XN MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.