PMV31XN
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV31XN
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 5.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037
Ohm
Package:
TO236AB
PMV31XN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV31XN
Datasheet (PDF)
..1. Size:241K philips
pmv31xn.pdf
PMV31XNTrenchMOS extremely low level FETRev. 01 26 February 2003 Product data1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV31XN in SOT23.2. Features TrenchMOS technology Very fast switching Low threshold voltage Surface mount package.3. Applications Battery powere
..2. Size:210K tysemi
pmv31xn.pdf
Product specificationPMV31XNN-channel TrenchMOS FETRev. 2 30 November 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology
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