All MOSFET. PMV32UP Datasheet

 

PMV32UP Datasheet and Replacement


   Type Designator: PMV32UP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO236AB
 

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PMV32UP Datasheet (PDF)

 ..1. Size:1546K  nxp
 pmv32up.pdf pdf_icon

PMV32UP

PMV32UP20 V, 4 A P-channel Trench MOSFETRev. 1 11 March 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V drain-source on-state resistance Very fast switchingr

 ..2. Size:327K  tysemi
 pmv32up.pdf pdf_icon

PMV32UP

Product specificationPMV32UP20 V, 4 A P-channel Trench MOSFETRev. 1 11 March 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V drain-source on-state resistance

Datasheet: PMV16UN , PMV20XN , PMV213SN , PMV22EN , PMV28UN , PMV30UN , PMV30XN , PMV31XN , IRFP450 , PMV37EN , PMV40UN , PMV45EN , PMV48XP , PMV56XN , PMV60EN , PMV65XP , PMZ1000UN .

History: PML260SN | FCH041N65F-F085 | DMN3110LCP3 | TPC8104 | IPSA70R2K0CE | WML90R500S | AOD4S60

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