PMV56XN Specs and Replacement

Type Designator: PMV56XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.92 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO236AB

PMV56XN substitution

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PMV56XN datasheet

 ..1. Size:96K  philips
 pmv56xn.pdf pdf_icon

PMV56XN

PMV56XN TrenchMOS extremely low level FET Rev. 02 24 June 2004 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package. 1.3 Applications Battery management ... See More ⇒

 ..2. Size:100K  tysemi
 pmv56xn.pdf pdf_icon

PMV56XN

Product specification PMV56XN TrenchMOS extremely low level FET Rev. 02 24 June 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package. 1.3 Applications Batte... See More ⇒

Detailed specifications: PMV30UN, PMV30XN, PMV31XN, PMV32UP, PMV37EN, PMV40UN, PMV45EN, PMV48XP, AO4407, PMV60EN, PMV65XP, PMZ1000UN, PMZ250UN, PMZ270XN, PMZ350XN, PMZ390UN, PMZ760SN

Keywords - PMV56XN MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs