PMV56XN Datasheet and Replacement
Type Designator: PMV56XN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.92 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.76 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO236AB
PMV56XN substitution
PMV56XN Datasheet (PDF)
pmv56xn.pdf
PMV56XNTrenchMOS extremely low level FETRev. 02 24 June 2004 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.1.3 Applications Battery management
pmv56xn.pdf
Product specificationPMV56XNTrenchMOS extremely low level FETRev. 02 24 June 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features TrenchMOS technology Very fast switching Low threshold voltage Subminiature surface mount package.1.3 Applications Batte
Datasheet: PMV30UN , PMV30XN , PMV31XN , PMV32UP , PMV37EN , PMV40UN , PMV45EN , PMV48XP , AO4407 , PMV60EN , PMV65XP , PMZ1000UN , PMZ250UN , PMZ270XN , PMZ350XN , PMZ390UN , PMZ760SN .
Keywords - PMV56XN MOSFET datasheet
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