PMZ1000UN Specs and Replacement
Type Designator: PMZ1000UN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.48 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: SOT883
PMZ1000UN substitution
- MOSFET ⓘ Cross-Reference Search
PMZ1000UN datasheet
pmz1000un.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
Detailed specifications: PMV32UP, PMV37EN, PMV40UN, PMV45EN, PMV48XP, PMV56XN, PMV60EN, PMV65XP, IRFP250, PMZ250UN, PMZ270XN, PMZ350XN, PMZ390UN, PMZ760SN, PSMN004-60B, PSMN005-30K, PSMN005-75B
Keywords - PMZ1000UN MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
